Self-Heating Effects in a BiCMOS on SOI Technology for RFIC Applications

DC self-heating effects modelling in SOI and bulk FinFETs

DC thermal effects modelling for nanometric silicon-on-insulator (SOI) and bulk fin-shaped field-effect transistors (FinFETs) is presented. Among other features, the model incorporates self-heating effects (SHEs), velocity saturation and short-channel effects. SHEs are analysed in depth by means of thermal resistances, which are determined through an equivalent thermal circuit, accounting for t...

Self-Heating Effects in SOI Devices and GaN HEMTs

BiCMOS Technology Processes, Trends, and Applications

This paper presents an investigation on the processes, trends, and applications of the BiCMOS technology in the fields of microelectronics and communication electronics. The investigation will focus on the design perspectives and different modifications that were developed to provide a very-high performance BiCMOS integrated circuit for both digital and mixed-signal applications. E. A. Gonzalez...

A Novel SOI MESFET by Implanted N Layer (INL-SOI) for High Performance Applications

This paper introduces a novel silicon-on-insulator (SOI) metal–semiconductor field-effect transistor (MESFET) with an implanted N layer (INL-SOI MESFET) to improve the DC and radio frequency characteristics. The DC and radio frequency characteristics of the proposed structure are analyzed by the 2-D ATLAS simulator and compared with a conventional SOI MESFET (C-SOI MESFET). The simulated result...

Modeling of self-heating effects in thin-film soi MOSFET's as a function of temperature

Self-heating phenomena are studied from room down to near liquid helium temperatures in fully depleted N channel thin film SIMOX MOS devices. A simple theoretical analysis of the self-heating effect is worked out. A method for the extraction of the thermal resistance and the device temperature rise directly from the static output characteristics is derived. Also direct self heating transient me...